Materials For Photochemical Image Enhancement With 436, 365, Or 248 nm Radiation

James R. Sheats

doi:10.1117/12.953053

30 January 1989 Materials For Photochemical Image Enhancement With 436, 365, Or 248 nm Radiation

James R. Sheats

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953053
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

The chemistry of Photochemical Image Enhancement with anthracene photooxiidation is described in detail, emphasizing materials properties needed to avoid reciprocity failure due to oxygen depletion. The application of new materials, including dianthrylethanes and methacrylate-siloxane graft copolymers, is described; these are capable of providing exposure times of less than 1 sec, with the possibility of further improvements. The performance characteristics of existing materials have been compared to those of CEL by use of a simple analytical formula. Data are also presented on behavior in the deep UV, with a view toward application as CEL and PIE materials for DUV lithography.

Citation Download Citation

James R. Sheats "Materials For Photochemical Image Enhancement With 436, 365, Or 248 nm Radiation", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953053

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