InAsSb photoluminescence at low temperatures

K. Murawski; K. Grodecki; P. Martyniuk

doi:10.1117/12.2503625

14 August 2018 InAsSb photoluminescence at low temperatures

K. Murawski, K. Grodecki, P. Martyniuk

Author Affiliations +

Proceedings Volume 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 108300T (2018) https://doi.org/10.1117/12.2503625
Event: Thirteenth Integrated Optics: Sensors, Sensing Structures and Methods Conference, 2018, Szcyrk, Poland

Abstract

In this work we present photoluminescence measurements of InAs _0.916Sb_0.084 bulk material grown in MBE VIGO/MUT laboratory [1–2]. Photoluminescence spectra showed the occurrence of two peaks in temperature range 20K-40K, one of them comes from the band-to-band transition while the another is the result of exciton transition [3].

Citation Download Citation

K. Murawski, K. Grodecki, and P. Martyniuk "InAsSb photoluminescence at low temperatures", Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 108300T (14 August 2018); https://doi.org/10.1117/12.2503625

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