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17 September 2018 Ammonothermal growth of bulk GaN crystals (Conference Presentation)
Siddha Pimputkar
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Proceedings Volume 10754, Wide Bandgap Power and Energy Devices and Applications III; 1075403 (2018) https://doi.org/10.1117/12.2323683
Event: SPIE Optical Engineering + Applications, 2018, San Diego, California, United States
Abstract
Recent advances in the ammonothermal growth of bulk, single crystal GaN will be presented. Building on demonstrated improvements in growth rate and purity of basic ammonothermal GaN crystals using capsule systems, new experimental setups were developed enabling in situ temperature measurements of the supercritical fluid simultaneously in the growth and dissolution zone during crystal growth. New insight which has been gained leveraging these probes will be presented, with a particular focus on impurity incorporation trends over a range of process conditions and fundamental insight into the growth kinetics. The continued pursuit of improved growth rate and reduced defect density material has led to the development of novel autoclave systems which may permit exploration of novel chemistries to enable growth of bulk III-N crystals using the ammonothermal method.
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Siddha Pimputkar "Ammonothermal growth of bulk GaN crystals (Conference Presentation)", Proc. SPIE 10754, Wide Bandgap Power and Energy Devices and Applications III, 1075403 (17 September 2018); https://doi.org/10.1117/12.2323683
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KEYWORDS
Crystals
Gallium nitride
Chemistry
In situ metrology
Temperature metrology
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