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18 September 2018 High TMR dual-MTJ STT-MRAM design with perpendicular magnetic anisotropy (Conference Presentation)
Zheng Duan, Sebastian Schafer, Volodymyr Voznyuk, Xueti Tang, Gen Feng, Donkoun Lee, Lifeng Zheng, Dmytro Apalkov, Robert Beach, Vladimir Nikitin
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Proceedings Volume 10732, Spintronics XI; 107321K (2018) https://doi.org/10.1117/12.2322798
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States
Abstract
STT-MRAM cell design with dual magnetic tunnel junctions (D-MTJ) is a novel design that show a factor of ~2 in switching performance compared to conventional MRAM design. However, the disadvantage is D-MTJ tends to show lower TMR. In this presentation, we demonstrate it's possible to achieve high TMR D-MTJ cell design without compromising its performance gain. We accomplished this by thinning down the secondary MgO barrier. We observe that when thinning down the secondary barrier, the device level TMR reaches a level close to conventional MRAM design of the same free layer while still preserving its high switching performance
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Zheng Duan, Sebastian Schafer, Volodymyr Voznyuk, Xueti Tang, Gen Feng, Donkoun Lee, Lifeng Zheng, Dmytro Apalkov, Robert Beach, and Vladimir Nikitin "High TMR dual-MTJ STT-MRAM design with perpendicular magnetic anisotropy (Conference Presentation)", Proc. SPIE 10732, Spintronics XI, 107321K (18 September 2018); https://doi.org/10.1117/12.2322798
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KEYWORDS
Magnetism
Anisotropy
Switching
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