Open Access Paper
8 October 2018 Front Matter: Volume 10732
Abstract
This PDF file contains the front matter associated with SPIE Proceedings Volume 10732, including the Title Page, Copyright information, Table of Contents, Author and Conference Committee lists.

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Author(s), “Title of Paper,” in Spintronics XI, edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, Manijeh Razeghi, Henri Jaffrès, Proceedings of SPIE Vol. 10732 (SPIE, Bellingham, WA, 2018) Sevendigit Article CID Number.

ISSN: 0277-786X

ISSN: 1996-756X (electronic)

ISBN: 9781510620353

ISBN: 9781510620360 (electronic)

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Authors

Numbers in the index correspond to the last two digits of the seven-digit citation identifier (CID) article numbering system used in Proceedings of SPIE. The first five digits reflect the volume number. Base 36 numbering is employed for the last two digits and indicates the order of articles within the volume. Numbers start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B…0Z, followed by 10-1Z, 20-2Z, etc.

Adenwalla, S., 0B

Albisetti, Edoardo, 1Q

Aldosary, Mohammed, 0G

Andrews, David L., 16

Banerjee, T., 3B

Berritta, Marco, 2E

Bertacco, Riccardo, 0C, 1Q

Birge, Norman O., 1M

Bougeard, D., 19

Buhrman, R. A., 1U

Calarco, R., 0C

Calò, Annalisa, 1Q

Caprara, Sergio, 2P

Cecchi, S., 0C

Cheng, Long, 1S

Culcer, Dimitrie, 0N

Dai, Yutong, 1S

Das, A., 3B

Dobrowolska, Margaret, 0P

Dong, Sining, 0P

Finizio, Simone, 1Q

Flatté, Michael E., 38

Forbes, Kayn A., 16

Frankerl, C., 19

Friedman, Joseph S., 1P

Furdyna, Jacek K., 0P

Garay, Javier, 0G

Gelfert, S., 19

Goossens, A. S., 3B

Goossens, V. M., 3B

Grützmacher, Detlev, 0V

Hamilton, A. R., 0N

Hao, Yifei, 0F

Hervieux, Paul-Antoine, 2V

Hoffmann, A., 12

Hong, Xia, 0F

Hurst, Jérôme, 2V

Jalil, Abdur Rehman, 0V

Jungfleisch, M. B., 12

Kaushik, Brajesh Kumar, 1W

Kent, Andrew D., 38

Kikuchi, Toru, 2F Kodera, Yasuhiro, 0G

Kölzer, Jonas, 0V

Korn, T., 19

Langenberg, Deler, 1S

Li, Lin, 1S

Li, Xiang, 0P

Liu, Hong, 0N

Liu, Xinyu, 0P

Lüth, Hans, 0V

Ma, Xiao-Dong, 1S

MacDonald, A. H., 0N

Madami, Marco, 1Q

Madden, Alexander E., 1M

Manfredi, Giovanni, 2V

Mansuripur, Masud, 30

Marcellina, Elizabeth, 0N

Miao, Guo-Xing, 1S

Mondal, Ritwik, 2E

Mussler, Gregor, 0V

Naaman, Ofer, 1M

Nam Hai, Pham, 0U

Nandy, Ashis K., 2E

Nessi, L., 0C

Nguyen, Huynh Duy Khang, 0U

Nichols, George, 1S

Oppeneer, Peter M., 2E

Ou, Yongxi, 1U

Petti, Daniela, 1Q

Raabe, Jörg, 1Q

Raimondi, Roberto, 2P

Rajapitamahuni, Anil, 0F

Rakheja, Shaloo, 38

Ralph, D. C., 1U

Reichl, C., 19

Riedo, Elisa, 1Q

Rinaldi, C., 0C

Rosenbach, Daniel, 0V

Roy, Kuntal, 07

Sala, Giacomo, 1Q

Salis, G., 19

Schäpers, Thomas, 0V

Schleenvoigt, Michael, 0V

Schmitt, Tobias, 0V

Schüffelgen, Peter, 0V

Schuh, D., 19

Schüller, C., 19

Seibold, Götz, 2P

Sekine, Akihiko, 0N

Selberherr, Siegfried, 35

Sellappan, Pathikumar, 0G

Shi, Jing, 0G

Shi, Shengjie, 1U

Shreya, Sonal, 1W

Silvani, Raffaele, 1Q

Singh, Uday, 0B

Sklenar, J., 12

Sverdlov, Viktor, 35

Tacchi, Silvia, 1Q

Tatara, Gen, 2F

Ueda, Yugo, 0U

Varotto, S., 0C

Vignale, Giovanni, 15

Warren, Chad, 0G

Wegscheider, W., 19

Weyrich, Christian, 0V

Wintz, Sebastian, 1Q

Yao, Kenichiro, 0U

Zhang, Hui, 1S

Zhang, Le, 0F

Zhang, Steven S.-L., 15

Zhang, W., 12

Zheng, Xiaorui, 1Q

Žitko, Rok, 1N

Conference Committee

Symposium Chairs

  • Halina Rubinsztein-Dunlop, The University of Queensland (Australia)

  • Mark L. Brongersma, Geballe Laboratory for Advanced Materials (GLAM), Stanford University (United States)

Symposium Co-chairs

  • Harry A. Atwater Jr., California Institute of Technology (United States)

  • Nikolay I. Zheludev, Optoelectronics Research Centre (United Kingdom) and Nanyang Technological University (Singapore)

Conference Chairs

  • Henri-Jean Drouhin, Ecole Polytechnique (France)

  • Jean-Eric Wegrowe, Ecole Polytechnique (France)

  • Manijeh Razeghi, Northwestern University (United States)

Conference Co-chair

  • Henri Jaffrès, Unité Mixte de Physique CNRS/Thales (France)

Conference Program Committee

  • Franco Ciccacci, Politecnico di Milano (Italy)

  • Russell P. Cowburn, University of Cambridge (United Kingdom)

  • Scott A. Crooker, Los Alamos National Laboratory (United States)

  • Vincent Cros, Unité Mixte de Physique CNRS/Thales (France)

  • Hanan Dery, University of Rochester (United States)

  • Rogério de Sousa, University of Victoria (Canada)

  • Michel I. Dyakonov, Université Montpellier 2 (France)

  • Michael E. Flatté, The University of Iowa (United States)

  • Joseph S. Friedman, The University of Texas at Dallas (United States)

  • Jean-Marie George, Unité Mixte de Physique CNRS/Thales (France)

  • Julie Grollier, Unité Mixte de Physique CNRS/Thales (France)

  • Erez Hasman, Technion-Israel Institute of Technology (Israel)

  • Tomás Jungwirth, Institute of Physics of the CAS, v.v.i. (Czech Republic)

  • Giti A. Khodaparast, Virginia Polytechnic Institute and State University (United States)

  • Mathias Klaui, Universität Konstanz (Germany)

  • Daniel Lacour, Institut Jean Lamour (France)

  • Connie H. Li, U.S. Naval Research Laboratory (United States)

  • Aurélien Manchon, King Abdullah University of Science and Technology (Saudi Arabia)

  • Xavier Marie, INSA - Université of Toulouse (France)

  • Laurens W. Molenkamp, Julius-Maximilians-Univeristät Würzburg (Germany)

  • Hiro Munekata, Tokyo Institute of Technology (Japan)

  • Hans T. Nembach, National Institute of Standards and Technology (United States)

  • Yoshichika Otani, The University of Tokyo (Japan)

  • Vlad Pribiag, University of Minnesota, Twin Cities (United States)

  • Dafiné Ravelosona, Institut d’Électronique Fondamentale (France)

  • Nicolas Rougemaille, Institut NÉEL (France)

  • Georg Schmidt, Martin-Luther-Univeristät Halle-Wittenberg (Germany)

  • Jing Shi, University of California, Riverside (United States)

  • Vasily V. Temnov, Université du Maine (France)

  • Luc Thomas, Headway Technology (United States)

  • Evgeny Tsymbal, University of Nebraska-Lincoln (United States)

  • Olaf M. J. van’t Erve, U.S. Naval Research Laboratory (United States)

  • Joerg Wunderlich, Hitachi Cambridge Laboratory (United Kingdom)

  • Igor Zutic, University at Buffalo (United States)

Session Chairs

  • 1 Spin Pumping I

    Jean-Eric Wegrowe, Ecole Polytechnique (France)

  • 2A Spin Pumping II

    Takashi Kimura, Kyushu University (Japan)

  • 2B Transport in Spin-Textured Media and Devices

    Kohei Hamaya, Osaka University (Japan)

  • 3A Oxides Magnonics

    Shang-Fan Lee, Academia Sinica (Taiwan)

  • 3B Spin-Injection in Semiconductors

    Michel Hehn, Institut Jean Lamour (France)

  • 4A Topological Matter

    Georg Schmidt, Martin-Luther-Universität Halle-Wittenberg (Germany)

  • 4B Spin-Dynamics in Semiconductors

    Shireen Adenwalla, University of Nebraska-Lincoln (United States)

  • 5A Spin-Orbit Torques in Topological Insulators

    Henri-Jean Drouhin, Ecole Polytechnique (France)

  • 5B Molecular Spintronics and Spin-Orbit Interaction

    Victor Lopez-Richard, Universidade Federal de São Carlos (Brazil)

  • 6A Unidirectional and Spin-Hall Magnetoresistance

    Hyunsoo Yang, National University of Singapore (Singapore)

  • 6B Spin-Orbit Interaction

    Henri Jaffrès, Unité Mixte de Physique CNRS/Thales (France)

  • 7A Magnetic Imaging

    Rie Matsumoto, National Institute of Advanced Industrial Science and Technology (Japan)

  • 7B Spin-VECSELs

    Henri Jaffrès, Unité Mixte de Physique CNRS/Thales (France)

  • 8A STT MRAM I

    Joseph S. Friedman, The University of Texas at Dallas (United States)

  • 8B Superconductivity and Majorana Fermions I

    Guoxing Miao, University of Waterloo (Canada)

  • 9A Spin Logic

    Luc Thomas, Headway Technologies, Inc. (United States)

  • 9B Superconductivity and Majorana Fermions II

    Norman Birge, Michigan State University (United States)

  • 10A Magnetic Tunnel Junctions

    Pietro Gambardella, ETH Zurich (Switzerland)

  • 10B 2D-Material Spintronics I

    Sergey Frolov, University of Pittsburgh (United States)

  • 11A Spin-Hall Effect and Spin Caloritronics

    Can Onur Avci, Massachusetts Institute of Technology (United States)

  • 11B 2D-Material Spintronics II

    Hans T. Nembach, National Institute of Standards and Technology (United States)

  • 12A Spin-Hall Effect

    Koki Takanashi, Tohoku University (Japan)

  • 12B Ultra-Fast Phenomena and Magnetization Inertia

    Stefano Bonetti, Stockholm University (Sweden)

  • 13A Spin-to-Charge Conversion at Surfaces and Interfaces

    Roberto Raimondi, Universitá degli Studi di Roma Tre (Italy)

  • 13B Dzyaloshinskii-Moriya Interaction and Skyrmions I

    Saroj P. Dash, Chalmers University of Technology (Sweden)

  • 14A Spin-to-Charge Conversion at Oxide Interfaces

    Connie H. Li, U.S. Naval Research Laboratory (United States)

  • 14B Ultrafast THz Spin Dynamics

    Manfred Fähnle, Max-Planck-Institut für Intelligente Systeme (Germany)

  • 15A New Concepts in Spintronics

    Branislav Nikolic, University of Delaware (United States)

  • 15B Dzyaloshinskii-Moriya Interaction and Skyrmions II

    Igor Rozhansky, Ioffe Institute (Russian Federation)

  • 16A Emerging Concepts in Spin Transport

    Siegfried Selberherr, Technische Universität Wien (Austria)

  • 16B Spin-Orbitronics in Topological Insulators

    Jingbo Qi, University of Electronic Science and Technology of China (China)

  • 17A Bio-Inspired and Neuromorphic Computation

    Tom Silva, National Institute of Standards and Technology (United States)

  • 17B Dzyaloshinskii-Moriya Interaction and Skyrmions III

    Christos Panagopoulos, Nanyang Technological University (Singapore)

  • 18 Ultrafast THz Spin Dynamics II

    Claire Baraduc, Commissariat à l’Énergie Atomique (France)

Introduction

The eleventh edition of the Spintronics symposium gathered about one hundred and thirty speakers in San Diego, California (United States) from Sunday 19 August to Thursday 23 August 2018.

In line with the previous editions, Spintronics XI symposium, held in the framework of the Optics + Photonics symposium, covered hot topics in Spintronics. The conference was an invaluable opportunity for informal and stimulating discussions between experts as well as for networking in a friendly atmosphere, testifying to the continued dynamism of our field of research.

With 34 oral sessions, the symposium gave a broad spectrum of the active and emerging fields in spintronics. Recent results at the forefront of theoretical, experimental, and technological developments have been discussed. An important place has been given to Spinorbitronics Phenomena with 5 focused sessions, Topological Matter (4 sessions), Dzyaloshinskii-Moriya Interaction and Skyrmions (3 sessions), Ultrafast Magnetism and THz Spintronics (3 sessions), whose application prospects are promising. Special attention has been paid (with 2 sessions) to the developments of Magnetic MTJ and RAMs in connection with industrial applications, Spin Injection, Spin Pumping, Two-Dimensional Materials, Spin-to-Charge Conversion, and Emerging Concepts.

Many other challenging topics were covered including (with one session) Magnetic Imaging, Spin Logic, Spin VECSELs, Neuromorphic and Bio-Inspired Applications, Spin Dynamics, Molecular Spintronics, and Oxide-Based Spintronics.

Additionally, we are grateful to the SPIE staff and to the Program Committee members who did a tremendous work. Special thanks to all colleagues and friends who helped organizing focused sessions. We warmly thank all the authors and speakers for their active participation: they have again made this conference a great success.

Henri-Jean Drouhin

Jean-Eric Wegrowe

Manijeh Razeghi

Henri Jaffrès

© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
"Front Matter: Volume 10732", Proc. SPIE 10732, Spintronics XI, 1073201 (8 October 2018); https://doi.org/10.1117/12.2515621
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KEYWORDS
Spintronics

Magnetism

Dielectrics

Interfaces

Oxides

Ultrafast phenomena

Fermions

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