Paper
5 March 2018 Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots
Maliya, Abuduwayiti Aierken, Yudong Li, Dong Zhou, Xiaofan Zhao, Qi Guo, Chaoming Liu
Author Affiliations +
Proceedings Volume 10710, Young Scientists Forum 2017; 107100I (2018) https://doi.org/10.1117/12.2317612
Event: Young Scientists Forum 2017, 2017, Shanghai, China
Abstract
We investigate the effects of 1.0MeV electron beam irradiation on the photoluminescence of self-assembled InAs/GaAs quantum dots. After irradiation doses up to 1×1016e-/cm2 , photoluminescence of all samples was degraded dramatically and some additional radiation-induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low electron doses under different photo-injection condition in two samples, are also noticed. Different energy shift was observed in two samples with different Quantum Dot sizes. We attribute this remarkable phenomenon to combination of stress relaxation induced red-shift and In-Ga intermixing caused blue-shift.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maliya, Abuduwayiti Aierken, Yudong Li, Dong Zhou, Xiaofan Zhao, Qi Guo, and Chaoming Liu "Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots", Proc. SPIE 10710, Young Scientists Forum 2017, 107100I (5 March 2018); https://doi.org/10.1117/12.2317612
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Luminescence

Quantum dots

Electron beams

Aerospace engineering

Optoelectronic devices

Physics

Back to Top