Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level

Arnaud Garnache; Mikhaël Myara; A. Laurain; Aude Bouchier; J.P. Perez; P. Signoret; I. Sagnes; D. Romanini

doi:10.1117/12.2308259

21 November 2017 Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level

Arnaud Garnache, Mikhaël Myara, A. Laurain, Aude Bouchier, J.P. Perez, P. Signoret, I. Sagnes, D. Romanini

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Proceedings Volume 10566, International Conference on Space Optics — ICSO 2008; 105661Q (2017) https://doi.org/10.1117/12.2308259
Event: International Conference on Space Optics 2008, 2008, Toulouse, France

Abstract

We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM₀₀ beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.

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Arnaud Garnache, Mikhaël Myara, A. Laurain, Aude Bouchier, J.P. Perez, P. Signoret, I. Sagnes, and D. Romanini "Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level", Proc. SPIE 10566, International Conference on Space Optics — ICSO 2008, 105661Q (21 November 2017); https://doi.org/10.1117/12.2308259

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