Raman And Photoluminescence Analysis Of Cd[sub]1-x[/sub]Mn[sub]x[/sub]Te Thin Films

S. Perkowitz; Z. C. Feng; A. Erbil; R. Sudharsanan; K. T. Pollard; A. Rohatgi

doi:10.1117/12.951575

5 July 1989 Raman And Photoluminescence Analysis Of Cd_1-xMn_xTe Thin Films

S. Perkowitz, Z. C. Feng, A. Erbil, R. Sudharsanan, K. T. Pollard, A. Rohatgi

Proceedings Volume 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology; (1989) https://doi.org/10.1117/12.951575
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Cd1-xMnxTe films (thickness ~0.5 micron, x = 0.10 - 0.37) have beengrown Ey metalorganic chemical vapor deposition on commercial GaAs and glass substrates with and without buffer layers of CdTe and CdS for potential use in solar cells. Raman scattering and photoluminescence played an important role in characterizing and optimizing film quality. Raman methods established the relation between film quality and substrate type or growth temperature. Photoluminescence spectroscopy determined the percent of Mn in the as-grown films, displayed stress effects due to lattice mismatch and their dependence on substrate, and indicated the presence of defects.

Citation Download Citation

S. Perkowitz, Z. C. Feng, A. Erbil, R. Sudharsanan, K. T. Pollard, and A. Rohatgi "Raman And Photoluminescence Analysis Of Cd_1-xMn_xTe Thin Films", Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); https://doi.org/10.1117/12.951575

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