Study of high power generation in UTC-PD at 110-210 GHz

Toshimasa Umezawa; Atsushi Kanno; Kouichi Akahane; Atsushi Matsumoto; Naokatsu Yamamoto; Tetsuya Kawanishi

doi:10.1117/12.2287589

23 February 2018 Study of high power generation in UTC-PD at 110-210 GHz

Toshimasa Umezawa, Atsushi Kanno, Kouichi Akahane, Atsushi Matsumoto, Naokatsu Yamamoto, Tetsuya Kawanishi

Proceedings Volume 10531, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI; 1053115 (2018) https://doi.org/10.1117/12.2287589
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

We designed and fabricated a low-bias operational uni-travelling carrier photodiode (UTC-PD) structure, which can be operated at over 100 GHz. The main structure of the device consisted of p-doped InGaAs for the photo-absorption layer and non-doped InP for the carrier collector layer, to obtain both a high electron drift velocity at a low bias and a small CR time constant based on the pn-junction capacitance. Through an on-wafer probing test, the frequency response was measured up to 210 GHz using a 1 mm coaxial connecter type (DC-110GHz), W-band (75–110 GHz) and G-band (140–220 GHz) waveguide probe with a spectrum analyzer. In the measurement results, a large bandwidth of 10 MHz-110 GHz could be obtained with good flatness within ±1 dB. When the W-band and G-band performance were characterized, the high-power characteristic of -3.8 dBm could be achieved at 106 GHz. and the output power level of - 19.8 dBm could be confirmed at 210 GHz as well.

Citation Download Citation

Toshimasa Umezawa, Atsushi Kanno, Kouichi Akahane, Atsushi Matsumoto, Naokatsu Yamamoto, and Tetsuya Kawanishi "Study of high power generation in UTC-PD at 110-210 GHz", Proc. SPIE 10531, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI, 1053115 (23 February 2018); https://doi.org/10.1117/12.2287589

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