Paper
27 October 2017 Taking a SHARP look at mask 3D effects
Markus P. Benk, Weilun Chao, Ryan Miyakawa, Kenneth Goldberg, Patrick Naulleau
Author Affiliations +
Abstract
Mask 3D effects are an area of active research in EUV mask technology. Mask-side numerical aperture, illumination, feature size and absorber thickness are key factors modulating mask 3D effects and affecting printability and process window. Variable mask-side NA and flexible illumination make the SHARP actinic EUV microscope a powerful instrument for the study of mask 3D effects. We show an application example, comparing mask 3D effects for a standard Tantalum Nitride absorber and a thinner, 40-nm Nickel absorber. Data is presented for 0.33 4xNA and anamorphic 0.55 4x/8xNA. The influence of different illumination settings on mask 3D effects is discussed.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Markus P. Benk, Weilun Chao, Ryan Miyakawa, Kenneth Goldberg, and Patrick Naulleau "Taking a SHARP look at mask 3D effects", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500Y (27 October 2017); https://doi.org/10.1117/12.2281109
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KEYWORDS
Photomasks

Extreme ultraviolet

Extreme ultraviolet lithography

Imaging systems

Lenses

EUV optics

Microscopes

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