Gas spectroscopy system with transmitters and receivers in SiGe BiCMOS for 225-273 GHz

Klaus Schmalz; Nick Rothbart; Johannes Borngräber; Selahattin Berk Yilmaz; Dietmar Kissinger; Heinz-Wilhelm Hübers

doi:10.1117/12.2277310

6 October 2017 Gas spectroscopy system with transmitters and receivers in SiGe BiCMOS for 225-273 GHz

Klaus Schmalz, Nick Rothbart, Johannes Borngräber, Selahattin Berk Yilmaz, Dietmar Kissinger, Heinz-Wilhelm Hübers

Proceedings Volume 10439, Millimetre Wave and Terahertz Sensors and Technology X; 1043902 (2017) https://doi.org/10.1117/12.2277310
Event: SPIE Security + Defence, 2017, Warsaw, Poland

Abstract

This paper updates results of our work on gas spectroscopy based on transmitters (TXs) and receivers (RXs) in IHP's 0.13 μm SiGe BiCMOS technology. The improved performance of our system is shown by the absorption spectra of gaseous methanol in the range 241 - 242 GHz at 1.4 Pa, corresponding to an absorption line width of about 1 MHz. The signal-noise ratio (SNR) for the absorption line of methanol at 241.7 GHz is used as measure. The system includes two fractional-n phase-locked loops (PLLs), which allow frequency ramps for the TX and RX, and a superimposed frequency shift keying modulation (FSK) for the TX. Another option includes reference frequency ramps for the PLLs in integer-n mode, which are realized by a direct digital synthesizer (DDS). An SNR of 1515 is observed for the 241.7 GHz absorption line at 1.4 Pa. We extend our single band TX/RX system with the range 238 - 252 GHz to a multi-band system to cover the range 225 - 273 GHz. It is built by combining corresponding pairs of TXs and RXs of three frequency bands in this range. The multi-band operation allows parallel spectra acquisition for these bands. For the TXs and RXs appropriate frequency ramps are generated by their external fractional-n PLL devices.

Citation Download Citation

Klaus Schmalz, Nick Rothbart, Johannes Borngräber, Selahattin Berk Yilmaz, Dietmar Kissinger, and Heinz-Wilhelm Hübers "Gas spectroscopy system with transmitters and receivers in SiGe BiCMOS for 225-273 GHz", Proc. SPIE 10439, Millimetre Wave and Terahertz Sensors and Technology X, 1043902 (6 October 2017); https://doi.org/10.1117/12.2277310

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