Paper
22 June 1989 Monolithic Four-Beam Semiconductor Laser Array With Built-In Monitoring Photodiodes
T. Yamaguchi, K. Yodoshi, K. Minakuchi, Y. Inoue, N. Tabuchi, K. Komeda, H. Hamada, T. Niina
Author Affiliations +
Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976349
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
Abstract
A four-beam semiconductor laser was developed in which a monolithic array of four individually addressable GaAlAs high power lasers and four integrated Si photodiodes for monitoring the light output power of laser beams are housed in a single package. The main specifications are as follows; output power per beam, 40 mW; wavelength, 830 nm; and monitoring current at 30 mW, 100~200 Thermal analysis by numerical simulation was carried out and compared to experimental values observed during simultaneous operation of the multiple elemental lasers. The operating lifetime is estimated to be more than 10,000 hrs at room temperature.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Yamaguchi, K. Yodoshi, K. Minakuchi, Y. Inoue, N. Tabuchi, K. Komeda, H. Hamada, and T. Niina "Monolithic Four-Beam Semiconductor Laser Array With Built-In Monitoring Photodiodes", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); https://doi.org/10.1117/12.976349
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Cited by 4 scholarly publications and 1 patent.
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KEYWORDS
Semiconductor lasers

Photodiodes

Silicon

Liquid phase epitaxy

Laser development

Automatic control

Optical discs

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