Paper
6 July 1989 Ground State Depleted (GSD) Solid State Lasers: Principles, Characteristics, And Scaling
William F. Kruoke, L. L. Chase
Author Affiliations +
Proceedings Volume 1040, High Power and Solid State Lasers II; (1989) https://doi.org/10.1117/12.951170
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
Abstract
A novel class of rare earth doped solid state lasers is described. The Ground State Depleted (GSD) laser is pumped by an intense (>tens kW/cm2) narrowband (<few nm) laser source and is characterized by: (1) an unusually low laser ion doping density (5-10 x 1018 ions/cc), (2) an unusually large fractional excited population inversion density (4-8 x 1018 ions/cc or >75%), (3) a gain element that is optically thick at the pump wavelength, (4) a gain element that has a substantially uniform gain distribution due to a bleaching of the pump transition at the pump intensity utilized. These features enable efficient room temperature operation of rare earth ion laser transitions terminating on the ground manifold. The relationships between laser parameters (cross sections, saturation fluences and fluxes, bleaching wave velocities, etc.) are given and laser performance scaling relationships are presented and discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William F. Kruoke and L. L. Chase "Ground State Depleted (GSD) Solid State Lasers: Principles, Characteristics, And Scaling", Proc. SPIE 1040, High Power and Solid State Lasers II, (6 July 1989); https://doi.org/10.1117/12.951170
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Cited by 7 scholarly publications.
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KEYWORDS
Ions

Semiconductor lasers

Solid state lasers

Absorption

Neodymium

Chromium

High power lasers

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