Modulation Spectroscopy For In Situ Characterization Of The Growth And Processing Of Semiconductors

Fred H. Pollak; H. Shen

doi:10.1117/12.951010

15 March 1989 Modulation Spectroscopy For In Situ Characterization Of The Growth And Processing Of Semiconductors

Fred H. Pollak, H. Shen

Proceedings Volume 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors; (1989) https://doi.org/10.1117/12.951010
Event: SPIE Advanced Processing Technologies for Optical and Electronic Devices (colocated wth OPTCON), 1988, Santa Clara, CA, United States

Abstract

This paper reviews some recent developments in the use of contactless modulation spectroscopy techniques for the in-situ characterization of the growth and processing of semiconductors. Photoreflectance (PR) measurements at 600°C on GaAs and Ga_0.82A1 _0.08As have demonstrated the potential of this method for in-situ monitoring during growth. Investigations PR, electron beam electroreflectance and differential reflectometry have shown that post growth (processing) information can be obtained about very thin Ga1AlxAs/GaAs epitaxial films, Ga Al As alloy composition, deep trap states, surface electric fields and carrier concentrations, lattice-mismatched strain, ion-implantation and annealing, and sputtering. In addition, characterization of semiconductor heterostructures can be performed.

Citation Download Citation

Fred H. Pollak and H. Shen "Modulation Spectroscopy For In Situ Characterization Of The Growth And Processing Of Semiconductors", Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); https://doi.org/10.1117/12.951010

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