Eigenmodes of semiconductor spin-lasers with local linear birefringence and gain dichroism (Conference Presentation)

Henri Jaffrès; Tibor Fordos; Kamil Postava; Jaromir Pištora; Arnaud Garnache; Henri-Jean Drouhin

doi:10.1117/12.2278023

19 September 2017 Eigenmodes of semiconductor spin-lasers with local linear birefringence and gain dichroism (Conference Presentation)

Henri Jaffrès, Tibor Fordos, Kamil Postava, Jaromir Pištora, Arnaud Garnache, Henri-Jean Drouhin

Author Affiliations +

Proceedings Volume 10357, Spintronics X; 103572I (2017) https://doi.org/10.1117/12.2278023
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States

Abstract

We present a general method for modeling spin-lasers such as spin-polarized vertical cavity surface emitting laser (spin-VCSELs) with multiple quantum wells including anisotropic effects such as i) the emission of elliptically-polarized photons and originating from unbalanced spin-up and spin-down pumps, ii) the linear gain dichroism originating from the reduction from Td to C2v symmetry group at the III-V ternary interfaces and iii) the locally linear birefringence due to the anisotropic strain field at surface of ½ VECSELs an optical birefringence of quantum wells from the Henry’s factor. New recurrence calculations, together with analytically gain tensor derived from Maxwell-Bloch equations, enable to model emission from multiple quantum well active zones to find the laser resonance conditions and properties of eigenmodes. The method is demonstrated on real semiconductor laser structures. It is used for the extraction of optical permittivity tensors of surface strain and of quantum wells (QWs). The laser structures are also experimentally studied via ellipsometry methods by measurement of the rotation spectra of complete Mueller matrix in the reflection geometry. The anisotropic optical permittivity constants in the spectral range from 0.73 to 6.4 eV are modeled in order to disantangle surface and QWs contributions to the linear optical birefringence of the structures.

Conference Presentation

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Henri Jaffrès, Tibor Fordos, Kamil Postava, Jaromir Pištora, Arnaud Garnache, and Henri-Jean Drouhin "Eigenmodes of semiconductor spin-lasers with local linear birefringence and gain dichroism (Conference Presentation)", Proc. SPIE 10357, Spintronics X, 103572I (19 September 2017); https://doi.org/10.1117/12.2278023

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KEYWORDS

Quantum wells

Birefringence

Dichroic materials

Semiconductors

Ellipsometry

Interfaces

Photons

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