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21 September 2017 Room-temperature skyrmion shift device for memory application (Conference Presentation)
Guoqiang Yu, Pramey Upadhyaya, Qiming Shao, Hao Wu, Gen Yin, Xiang Li, Congli He, Wanjun Jiang, Xiufeng Han, Pedram Khalili Amiri, Kang L. Wang
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Proceedings Volume 10357, Spintronics X; 1035722 (2017) https://doi.org/10.1117/12.2275155
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States
Abstract
Magnetic skyrmions are intensively explored for potential applications in ultralow-energy data storage and computing. To create practical skyrmionic memory devices, it is necessary to electrically create and manipulate these topologically-protected information carriers in thin films, thus realizing both writing and addressing functions. Although room-temperature skyrmions have been previously observed, fully electrically controllable skyrmionic memory devices, integrating both of these functions, have not been developed to date. In this talk, I will talk about our recent demonstration of a room-temperature skyrmion shift memory device, where individual skyrmions are controllably generated and shifted using current-induced spin-orbit torques. Particularly, it is shown that one can select the device operation mode in between: (i) writing new single skyrmions, or (ii) shifting existing skyrmions, by controlling the magnitude and duration of current pulses. Thus, we electrically realize both writing and addressing of a stream of skyrmions in the device. This prototype demonstration brings skyrmions closer to real-world computing applications.
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Guoqiang Yu, Pramey Upadhyaya, Qiming Shao, Hao Wu, Gen Yin, Xiang Li, Congli He, Wanjun Jiang, Xiufeng Han, Pedram Khalili Amiri, and Kang L. Wang "Room-temperature skyrmion shift device for memory application (Conference Presentation)", Proc. SPIE 10357, Spintronics X, 1035722 (21 September 2017); https://doi.org/10.1117/12.2275155
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KEYWORDS
Magnetism
Data storage
Nanostructures
Prototyping
Thin film devices
Thin films
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