CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10349 > Article
Presentation
21 September 2017 Multi-physics simulation of monolithic tantalum oxide memristor-selector structures illustrating negative differential resistance (Conference Presentation)
John F. Sevic, Nobuhiko Kobayashi
Author Affiliations +
Proceedings Volume 10349, Low-Dimensional Materials and Devices 2017; 103490Z (2017) https://doi.org/10.1117/12.2275219
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States
Abstract
Self-assembled niobium dioxide (NbO2 ) thin-film selectors self-aligned to tantalum dioxide (TaO2) memristive memory cells are studied by a multi-physics simulation of the mass transport equation coupled to the current continuity equation and heat equation. While a compact circuit model can resolve quasi-static negative differential resistance (NDR), a self-consistent coupled transport formulation provides a non-equilibrium picture of NbO2-TaO2 selector-memristor operation ab initio. By employing the drift-diffusion transport approximation, a finite element method is used to study dynamic electrothermal behavior of our experimentally obtained selector-memristor devices, showing bulk conditions exist favorable for electroformation of NbO2 selector thin-films. Simulation results suggest Poole-Frenkel defects introduce negative differential resistance, in agreement with our measured results.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
John F. Sevic and Nobuhiko Kobayashi "Multi-physics simulation of monolithic tantalum oxide memristor-selector structures illustrating negative differential resistance (Conference Presentation)", Proc. SPIE 10349, Low-Dimensional Materials and Devices 2017, 103490Z (21 September 2017); https://doi.org/10.1117/12.2275219
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Resistance
Thin films
Finite element methods
Tantalum
Circuit switching
Niobium
Oxides
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top