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28 August 2017 Quantum-confined and pseudo Stark effects in the semiconductor conical quantum dot
K. G. Dvoyan, A. A. Tshantshapanyan, B. Vlahovic, G. J. Salamo
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Proceedings Volume 10344, Nanophotonic Materials XIV; 103440F (2017) https://doi.org/10.1117/12.2274688
Event: SPIE Nanoscience + Engineering, 2017, San Diego, California, United States
Abstract
Electronic states in a GaAs conical quantum dot (QD) are theoretically investigated within the framework of the geometric adiabatic approximation both in the strong and weak quantum confinement regimes. For the lower levels of the spectrum, the localization of the electron in the vicinity of the QD center-of-gravity is proved. The QD conical symmetry leads to the appearance of an atypical linear term in the effective confining potential. The influence of a uniform electric field on the system is also considered, and both the quantum-confined and pseudo- Stark effects are discussed. The possibility of the quasi-continuous spectrum implementation in the system is revealed in the presence of an electric field. For the weak quantum confinement regime, the motion of the exciton's center-of-gravity is quantized, which leads to the appearance of additional Coulomb sub-levels.
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K. G. Dvoyan, A. A. Tshantshapanyan, B. Vlahovic, and G. J. Salamo "Quantum-confined and pseudo Stark effects in the semiconductor conical quantum dot", Proc. SPIE 10344, Nanophotonic Materials XIV, 103440F (28 August 2017); https://doi.org/10.1117/12.2274688
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KEYWORDS
Quantum dots
Excitons
Gallium arsenide
Semiconductors
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