Patterning of photoluminescent nanostructured spots on silicon by air optical breakdown processing

A. V. Kabashin

doi:10.1117/12.2283875

29 August 2017 Patterning of photoluminescent nanostructured spots on silicon by air optical breakdown processing

A. V. Kabashin

Proceedings Volume 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging; 1031327 (2017) https://doi.org/10.1117/12.2283875
Event: Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada

Abstract

Nanostructured silicon can exhibit visible photoluminescence (PL) with quantum efficiency of up to few percent, although bulk silicon has a small (1.11 eV) and indirect band gap. This luminescent property gives a promise fo the creation of Si-based optoelectronics devices and their potential integration in standard Si-based microelectronics chips. The search of methods for the production of visible light-emission from Si-based materials becomes currently a great task and a subject of numerous studies, while "dry" fabrication techniques are of particular interest due to a much better compatibility with silicon processing technology.

Citation Download Citation

A. V. Kabashin "Patterning of photoluminescent nanostructured spots on silicon by air optical breakdown processing", Proc. SPIE 10313, Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 1031327 (29 August 2017); https://doi.org/10.1117/12.2283875

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