Studies on different passivation on InAs/GaSb type-II superlattice photodetectors

Yurong Cui; Jianxin Chen; Zhicheng Xu; Jiajia Xu; Yi Zhou; Li He

doi:10.1117/12.2247485

1 November 2016 Studies on different passivation on InAs/GaSb type-II superlattice photodetectors

Yurong Cui, Jianxin Chen, Zhicheng Xu, Jiajia Xu, Yi Zhou, Li He

Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 101573K (2016) https://doi.org/10.1117/12.2247485
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China

Abstract

As a promising candidate for the next generation of infrared detection and imaging, more and more studies are focused on the type-II InAs/GaSb superlattice recently. In this paper, we studied different passivation techniques and the dielectric film-semiconductor interface properties for InAs/GaSb superlattice photodetectors. We found that with Si₃N₄ passivation, the R₀A of the superlattice detector decreased from 2.8×10⁵Ωcm² to 12Ωcm² at 80K after a process of rapid thermal annealing (RTA) at 250°C for 60s. Excessive surface charge of 6.15×10¹²cm^-2 was measured from a gate-controlled structure. Meanwhile, the SiO₂ passivated devices can sustain its electrical performance after the RTA process.

Citation Download Citation

Yurong Cui, Jianxin Chen, Zhicheng Xu, Jiajia Xu, Yi Zhou, and Li He "Studies on different passivation on InAs/GaSb type-II superlattice photodetectors", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101573K (1 November 2016); https://doi.org/10.1117/12.2247485

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