Infrared responsivity enhancement for silicon detectors by non-mask reactive ion etching

Naiman Liao; Linlai Kou; Chunlin Luo; Renhao Li

doi:10.1117/12.2244129

25 October 2016 Infrared responsivity enhancement for silicon detectors by non-mask reactive ion etching

Naiman Liao, Linlai Kou, Chunlin Luo, Renhao Li

Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 1015708 (2016) https://doi.org/10.1117/12.2244129
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China

Abstract

Near Infrared responsivity of silicon-based detectors is low for weak light absorption in the wavelengths exceeding 1000nm. For 1064nm wavelength applications, it is necessary to use thick Si wafers to manufacturing devices for higher NIR responsivity performance. However, this leads to high applied voltage, long response time, imposing limitations on device characteristics and applications. Black silicon (BS) appears very high absorptance of light from the near-ultraviolet (250nm) to the near-infrared (2500nm) wavelength region. And the black silicon detectors are many times more responsivity than conventional silicon detectors in the near infrared.

In this article, BS is prepared using non-mask reactive ion etching technique and PIN BS detectors are fabricated. It is indicated that there is a disordered layer that is 2.0μm -3.5μm thick and made up of pillars with 90nm-400nm in diameter and 200nm-600nm in spacing interval. The reflectance of BS is less than 7% in the wavelength from 400nm to 1100nm, and rises from 1040nm. The absorptance of BS sample prepared by non-mask reactive ion etching remains more than 93% from 400nm to 1040nm, and the absorptance of 60% is observed at the wavelengths longer than 1500nm. High temperature annealing does not deteriorate its light absorption performance. The front-illuminated and back-illuminated BS PIN detectors are structured. At the wavelength of 1064nm, the responsivities of front-illuminated and back-illuminated BS PIN detectors are improved from 0.30A/W to 0.43A/W and 0.58A/W respectively.

Citation Download Citation

Naiman Liao, Linlai Kou, Chunlin Luo, and Renhao Li "Infrared responsivity enhancement for silicon detectors by non-mask reactive ion etching", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 1015708 (25 October 2016); https://doi.org/10.1117/12.2244129

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