Gate tie-down construct in the 22FDX technology: a silicon-based method for layout optimization

B. Ramadout; D. Wehella-Gamage; T. Staiger; H.-P. Moll; T.-Guha Neogi

doi:10.1117/12.2258453

28 March 2017 Gate tie-down construct in the 22FDX technology: a silicon-based method for layout optimization

B. Ramadout, D. Wehella-Gamage, T. Staiger, H.-P. Moll, T.-Guha Neogi

Proceedings Volume 10148, Design-Process-Technology Co-optimization for Manufacturability XI; 1014812 (2017) https://doi.org/10.1117/12.2258453
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

In order to allow competitive and low-cost designs in the 22nm FD-SOI technology 22FDX™, novel Middle-of-Line (MOL) constructs have been specifically enabled. The Gate Tie-Down (or “continuous RX”) construct allows an optimal device performance without loss of area. A method for a silicon-based evaluation and optimization of the Gate Tie-Down construct is presented here. We discuss the main design-process failure modes, their severity and the risk mitigation options. A full-factorial Design of Experiment used for the construct validation is presented and analyzed. Two critical failure modes are isolated and discussed. As a final step, the optimized design is validated over a much larger number of occurrences, showing a robust 4-sigma manufacturing design margin.

Citation Download Citation

B. Ramadout, D. Wehella-Gamage, T. Staiger, H.-P. Moll, and T.-Guha Neogi "Gate tie-down construct in the 22FDX technology: a silicon-based method for layout optimization", Proc. SPIE 10148, Design-Process-Technology Co-optimization for Manufacturability XI, 1014812 (28 March 2017); https://doi.org/10.1117/12.2258453

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