The effect of patterning options on embedded memory cells in logic technologies at iN10 and iN7

Raf Appeltans; Pieter Weckx; Praveen Raghavan; Ryoung-Han Kim; Gouri Sankar Kar; Arnaud Furnémont; Liesbet Van der Perre; Wim Dehaene

doi:10.1117/12.2255089

28 March 2017 The effect of patterning options on embedded memory cells in logic technologies at iN10 and iN7

Raf Appeltans, Pieter Weckx, Praveen Raghavan, Ryoung-Han Kim, Gouri Sankar Kar, Arnaud Furnémont, Liesbet Van der Perre, Wim Dehaene

Author Affiliations +

Proceedings Volume 10148, Design-Process-Technology Co-optimization for Manufacturability XI; 101480G (2017) https://doi.org/10.1117/12.2255089
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Static Random Access Memory (SRAM) cells are used together with logic standard cells as the benchmark to develop the process flow for new logic technologies. In order to achieve successful integration of Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) as area efficient higher level embedded cache, it also needs to be included as a benchmark. The simple cell structure of STT-MRAM brings extra patterning challenges to achieve high density. The two memory types are compared in terms of minimum area and critical design rules in both the iN10 and iN7 node, with an extra focus on patterning options in iN7. Both the use of Self-Aligned Quadruple Patterning (SAQP) mandrel and spacer engineering, as well as multi-level via’s are explored. These patterning options result in large area gains for the STT-MRAM cell and moreover determine which cell variant is the smallest.

Conference Presentation

Citation Download Citation

Raf Appeltans, Pieter Weckx, Praveen Raghavan, Ryoung-Han Kim, Gouri Sankar Kar, Arnaud Furnémont, Liesbet Van der Perre, and Wim Dehaene "The effect of patterning options on embedded memory cells in logic technologies at iN10 and iN7", Proc. SPIE 10148, Design-Process-Technology Co-optimization for Manufacturability XI, 101480G (28 March 2017); https://doi.org/10.1117/12.2255089

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available