Presentation + Paper
24 March 2017 Full chip hierarchical inverse lithography: a solution with perfect symmetry
Author Affiliations +
Abstract
In this paper we introduce an inverse lithography technology (ILT) solution that provides masks with perfect symmetry and minimal complexity. In this solution we divide the ILT problem into three steps and strictly maintain symmetry in each of these steps. First, we optimize an ideal grayscale mask. Second, we seed this ideal mask with polygons. Finally, we grow these seeds in a separate optimization flow. The final mask perfectly maintains the symmetry properties of the illumination source. To the best of our knowledge, this is the first ILT solution that can be used on the original design hierarchy on a full chip scale.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bayram Yenikaya "Full chip hierarchical inverse lithography: a solution with perfect symmetry", Proc. SPIE 10147, Optical Microlithography XXX, 101470L (24 March 2017); https://doi.org/10.1117/12.2257608
Lens.org Logo
CITATIONS
Cited by 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
SRAF

Lithography

Optical proximity correction

Databases

Tolerancing

Manufacturing

Algorithm development

RELATED CONTENT

Model-based assist feature generation
Proceedings of SPIE (March 20 2007)
RET and DFM techniques for sub 30nm
Proceedings of SPIE (March 13 2012)
Control and uniformity of 280 nm features in i line...
Proceedings of SPIE (July 07 1997)
Finding the right way DFM versus area efficiency for...
Proceedings of SPIE (March 15 2006)
Generating mask inspection rules for advanced lithography
Proceedings of SPIE (November 04 2005)

Back to Top