Combined process window monitoring for critical features

Carsten Hartig; Bernd Schulz; Robert Melzer; Matthias Ruhm; Daniel Fischer; Stefan Buhl; Boris Habets; Martin Rößiger; Manuela Gutsch

doi:10.1117/12.2259910

28 March 2017 Combined process window monitoring for critical features

Carsten Hartig, Bernd Schulz, Robert Melzer, Matthias Ruhm, Daniel Fischer, Stefan Buhl, Boris Habets, Martin Rößiger, Manuela Gutsch

Author Affiliations +

Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101450U (2017) https://doi.org/10.1117/12.2259910
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

After critical lithography steps, overlay and CD are measured to determine if the wafers need to be re-worked. Traditionally, overlay metrics are applied per X/Y-direction and, a CD metric is computed independently. From design standpoint, electrical failure is based on a complex interaction between CD deviations and overlay errors. We propose a method including design constraints, where results of different measurement steps are not judged individually, but in a combined way. We illustrate this with a critical design feature consisting of a contact requiring minimum distance to a neighboring metal line, resulting in much better correlation to yield than traditional methods.

Conference Presentation

Citation Download Citation

Carsten Hartig, Bernd Schulz, Robert Melzer, Matthias Ruhm, Daniel Fischer, Stefan Buhl, Boris Habets, Martin Rößiger, and Manuela Gutsch "Combined process window monitoring for critical features", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450U (28 March 2017); https://doi.org/10.1117/12.2259910

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