Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element

Takeyoshi Ohashi; Atsuko Yamaguchi; Kazuhisa Hasumi; Osamu Inoue; Masami Ikota; Gian Lorusso; Gabriele Luca Donadio; Farrukh Yasin; Siddharth Rao; Gouri Sankar Kar

doi:10.1117/12.2257908

28 March 2017 Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element

Takeyoshi Ohashi, Atsuko Yamaguchi, Kazuhisa Hasumi, Osamu Inoue, Masami Ikota, Gian Lorusso, Gabriele Luca Donadio, Farrukh Yasin, Siddharth Rao, Gouri Sankar Kar

Author Affiliations +

Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101450H (2017) https://doi.org/10.1117/12.2257908
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

A methodology to evaluate the memory cell property of STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory) with a CD-SEM (Critical Dimension-Scanning Electron Microscope) was proposed. STTMRAM is one of the promising candidates among various emerging memories, owing to its low power consumption, low latency, and excellent endurance. Meanwhile, the major issues of STT-MRAM are its small resistance window and the etching-induced damage during memory pillar formation process. The resistance variability and the damage region should be minimized to achieve the reliable operation and the size scaling. The correlation analysis between the resistance and the physical dimension was performed. It provided quantitative information required for process development and control, such as the size-independent resistance variability, the width of the damaged region, and the origin of the short failures. They are essential for the investigation of the causes for the cell-to-cell resistance variability as well as for the quantification of the damage during etching process.

Citation Download Citation

Takeyoshi Ohashi, Atsuko Yamaguchi, Kazuhisa Hasumi, Osamu Inoue, Masami Ikota, Gian Lorusso, Gabriele Luca Donadio, Farrukh Yasin, Siddharth Rao, and Gouri Sankar Kar "Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450H (28 March 2017); https://doi.org/10.1117/12.2257908

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available