Presentation
28 April 2017 All dielectric metasurfaces: enhanced nonlinearities and emission control (Conference Presentation)
Author Affiliations +
Proceedings Volume 10113, High Contrast Metastructures VI; 101130N (2017) https://doi.org/10.1117/12.2256008
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Two-dimensional metamaterials (metasurfaces) have led to many exciting phenomena both in linear and nonlinear optics. The ability to tailor optical modes and radiation patterns combined with low losses make all-dielectric metasurfaces an interesting platform for nonlinear optics and interactions with emitters. The combination of dielectric metasurfaces made from nanostructured III-V semiconductors results in very high second and third optical nonlinearities. Additionally, using epitaxial and heterostructured III-V semiconductors as the constituent material for such metasurfaces enables the inclusion of high quality quantum emitters. We will present recent results on the interaction between high Q modes present in dielectric metasurfaces and epitaxial quantum dots.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igal Brener "All dielectric metasurfaces: enhanced nonlinearities and emission control (Conference Presentation)", Proc. SPIE 10113, High Contrast Metastructures VI, 101130N (28 April 2017); https://doi.org/10.1117/12.2256008
Advertisement
Advertisement
KEYWORDS
Dielectrics

Nonlinear optics

Group III-V semiconductors

Light emitting diodes

Metamaterials

Nanostructuring

Quantum dots

Back to Top