Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Min Zhu; Jun Chen

doi:10.1117/12.2245978

31 October 2016 Performance optimization of Pnp InGaAs/InP heterojunction phototransistors

Min Zhu, Jun Chen

Proceedings Volume 10019, Optoelectronic Devices and Integration VI; 1001911 (2016) https://doi.org/10.1117/12.2245978
Event: SPIE/COS Photonics Asia, 2016, Beijing, China

Abstract

In this paper, a two-terminal Pnp InP/InGaAs heterojunction phototransistor with a floating base (2T-HPT) is built based on TCAD. To optimize the device performance, the precise adjustments of base doping and base width have been investigated. Properly reducing the base width can greatly enhance the emitter injection efficiency. The effect of inserting a thin, undoped InGaAs layer in the base region of the HPT has also been investigated in detail. It is found the intrinsic layer between emitter and base can reduce the knee voltage and dark current of the HPT.

Citation Download Citation

Min Zhu and Jun Chen "Performance optimization of Pnp InGaAs/InP heterojunction phototransistors", Proc. SPIE 10019, Optoelectronic Devices and Integration VI, 1001911 (31 October 2016); https://doi.org/10.1117/12.2245978

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