Quantitative Depth Profiling Analysis Of (Al,Ga)As Structures By Secondary Neutral Mass Spectrometry (SNMS)

Nicola Kelly; Ulrich Kaiser

doi:10.1117/12.947431

9 August 1988 Quantitative Depth Profiling Analysis Of (Al,Ga)As Structures By Secondary Neutral Mass Spectrometry (SNMS)

Nicola Kelly, Ulrich Kaiser

Author Affiliations +

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947431
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Secondary Neutral Mass Spectrometry (SNMS) has been applied to the quantitative compositional analysis as a function of depth of AlxGa1-xAs material systems. The technique described utilizes Ar+ ions from a high frequency, low pressure plasma for sputtering the sample surface. Low primary ion energies (typically 200 eV), coupled with high sample current densities (1-2 mA/cm2) allow rapid, high resolution depth profiling since atomic mixing and "knock-on" effects are minimized. Sputtered neutrals are post-ionized in the plasma by electron bombardment. The well-known matrix effects which limit quantitation in Secondary Ion Mass Spectrometry (SIMS), are negligible in SNMS. The sensitivity factor for Al is found to be independent of sample composition, x.

Citation Download Citation

Nicola Kelly and Ulrich Kaiser "Quantitative Depth Profiling Analysis Of (Al,Ga)As Structures By Secondary Neutral Mass Spectrometry (SNMS)", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947431

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