High Resolution Imaging Over Severe Metal Topography Using Dyed Image Reversal Resist

Giorgio A. L. M Degiorgis; Mauro G. G Calzavara

doi:10.1117/12.968313

1 January 1988 High Resolution Imaging Over Severe Metal Topography Using Dyed Image Reversal Resist

Giorgio A. L. M Degiorgis, Mauro G. G Calzavara

Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968313
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

This work evaluates the performance of an Image Reversal (Im.Re.) resist with dye added (0-1% by weight) in order to minimize reflectivity effects over aluminum topographies. Planarization over 1-1.5 μm. aluminum steps is studied as a function of viscosity using Im.Re. dyed resist. It is shown that Im.Re. process performance is not only influenced by dye concentration and exposure energies, but it is also significantly affected by the resist composition. High plasma selectivity and sidewall profiles of 85 degrees or higher are obtained with 1.2 μm. coating thickness, resolving 1 μm. 1/s geometries and lower, with limiting resolution, over topography, of Im.Re. dyed resist established in the 0.7-0.9 μm. region.

Citation Download Citation

Giorgio A. L. M Degiorgis and Mauro G. G Calzavara "High Resolution Imaging Over Severe Metal Topography Using Dyed Image Reversal Resist", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968313

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