Evaluation Of An Organosilicon Photoresist For Excimer Laser Lithography

Janet C. McFarland; Kevin J. Orvek; Gary A. Ditmer

doi:10.1117/12.968315

1 January 1988 Evaluation Of An Organosilicon Photoresist For Excimer Laser Lithography

Janet C. McFarland, Kevin J. Orvek, Gary A. Ditmer

Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968315
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

An organosilicon resist was investigated for use in deep UV laser lithography. The resist was based on 0-trimethylsilyl poly(vinylphenol) resin. It was found to exhibit transparency at 248nm comparable to the transparency of g-line light in conventional novolak resists, making single-layer resist processing possible. The results of single-layer and bi-layer patterning on an excimer laser contact printer are presented. The bi-layer processing uses oxygen reactive ion etching (RIE) for transfer of a top layer pattern into a thick underlying novolak layer.

Citation Download Citation

Janet C. McFarland, Kevin J. Orvek, and Gary A. Ditmer "Evaluation Of An Organosilicon Photoresist For Excimer Laser Lithography", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968315

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