Photorefractive Effect In Gaas And Inp In The Nanosecond Regime

J C Fabre; J.M. C Jonathan; G Roosen

doi:10.1117/12.943524

2 June 1988 Photorefractive Effect In Gaas And Inp In The Nanosecond Regime

J C Fabre, J.M. C Jonathan, G Roosen

Proceedings Volume 0864, Advanced Optoelectronic Technology; (1988) https://doi.org/10.1117/12.943524
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

The photorefractive effect in 43 m crystals shows specific symmetries in its dependence upon wave polarizations and crystal orientation. We summarize them and use them to study the energy dependence of the photorefractive two-beam mixing in semi-insulating gallium arsenide and indium phosphide in the nanosecond regime at 1.06 μm.

Citation Download Citation

J C Fabre, J.M. C Jonathan, and G Roosen "Photorefractive Effect In Gaas And Inp In The Nanosecond Regime", Proc. SPIE 0864, Advanced Optoelectronic Technology, (2 June 1988); https://doi.org/10.1117/12.943524

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available