Effect Of Magneto-Size Quantization On The Magnetic Susceptibility Of The Electrons In A3IIB2V Optoelectronic Materials

K. P. Ghatak; S. Biswas

doi:10.1117/12.967482

1 January 1987 Effect Of Magneto-Size Quantization On The Magnetic Susceptibility Of The Electrons In A3IIB2V Optoelectronic Materials

K. P. Ghatak, S. Biswas

Author Affiliations +

Proceedings Volume 0818, Current Developments in Optical Engineering II; (1987) https://doi.org/10.1117/12.967482
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

In recent years, there has been considerable interest in the study of various physical properties of ultrathin films of optoelectronic materials in the presence of size quantization where the restriction of the motion of the carriers in the direction normal to the surfaces of the film (say, the z-direction) leads to the quantization of the wave vector along z-direction. In the presence of a quantizing magnetic field along the above direction, the free motion parallel to the film is also quantized forming Landau levels and exhibits diamagnetism (X d. ) Moreover, the spinning motion of the electrons leads to paramagnetism due to spin-splitting of Landau leves (Xp). In the present communication, an attempt is made for the first time to investigate the dia-and paramagnetic susceptibilities on the electrons ultrathin films of A-4-LBX opto-electronic materials in the presence of magneto-size quantizati:m within the frame work on the generalized k formalism and taking into account the different types of anisotropies of the energy spectrum. It is found taking n-CdGeAs2 as an example, which finds extensive applications in non-linear optoelectronic materilas and light emitting diodes, that tne values of Xd and Xp are much higher than their bulk values in CdGeks2 and incL.ease with increasing carrier degeneracy. Besides, they also exhibit oscillatory dependence with the film thickness and are in excellent qualitative agreement with the experimental observation as reported elsewhere. In addition, the corresponding well-known expressions of the above type of materials having relatively large band gap are also obtained from the expressions derived.

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K. P. Ghatak and S. Biswas "Effect Of Magneto-Size Quantization On The Magnetic Susceptibility Of The Electrons In A3IIB2V Optoelectronic Materials", Proc. SPIE 0818, Current Developments in Optical Engineering II, (1 January 1987); https://doi.org/10.1117/12.967482

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