Optical Characterization Of Epitaxial And Doped Semiconductors

M. Geddo; D. Maghini; A . Stella; M. Cottini

doi:10.1117/12.940918

22 April 1987 Optical Characterization Of Epitaxial And Doped Semiconductors

M. Geddo, D. Maghini, A . Stella, M. Cottini

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940918
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

In this work it is shown that the optical characterization of doped semiconductor layers can give important information particularly on the main properties of the free carriers. In particular, a measurement of the p-polarized light reflected from doped Si films epitaxially grown on Si substrates is shown to give information on the free carrier concentration and also on the effective mass. Data on Pt Silicides are also reported.

Citation Download Citation

M. Geddo, D. Maghini, A . Stella, and M. Cottini "Optical Characterization Of Epitaxial And Doped Semiconductors", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940918

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