Defect Detection In Silicon By Optical Beam Induced Reflectance (OBIR)

G. E. Carver; J. D. Michalski

doi:10.1117/12.940906

22 April 1987 Defect Detection In Silicon By Optical Beam Induced Reflectance (OBIR)

G. E. Carver, J. D. Michalski

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940906
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Electrically active flaws near the surface of silicon wafers generally impair the successful manufacture of integrated circuits. Detrimental defects such as stacking faults, dislocations, and metallic precipitates are often 1-2 microns in size. Thus, a defect detection system would need to exhibit both high spatial resolution and contrast at defective sites. Several approaches for defect detection are in use, although no technique appears capable of non-destructively detecting 1 micron defects in silicon, without vacuum, in a timely manner. A pump-probe laser system has been developed to satisfy these requirements.

Citation Download Citation

G. E. Carver and J. D. Michalski "Defect Detection In Silicon By Optical Beam Induced Reflectance (OBIR)", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940906

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