Sub-Half Micrometer Resist Processes For The Aeble-150

R. D. Coyne; O. W. Otto

doi:10.1117/12.940369

30 June 1987 Sub-Half Micrometer Resist Processes For The Aeble-150

R. D. Coyne, O. W. Otto

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940369
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

Recent results in the development of positive and negative resist processes for use with the AEBLE-150 electron beam lithography system are discussed, detailing techniques used for the evaluation and modeling of resist performance. Specific results for RD-2000N, a negative resist available commercially from the Hitachi Corporation, are presented demonstrating processes suitable for use with the AEBLE-150 for feature sizes below 0.5μm. In addition, results of processes with high resolution imaging in thick layers of PMMA are presented.

Citation Download Citation

R. D. Coyne and O. W. Otto "Sub-Half Micrometer Resist Processes For The Aeble-150", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940369

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