InGaAsP High Power Laser Array

N. K. Dutta; T. M. Shen; S. G. Napholtz; T. Cella

doi:10.1117/12.937678

14 January 1987 InGaAsP High Power Laser Array

N. K. Dutta, T. M. Shen, S. G. Napholtz, T. Cella

Proceedings Volume 0723, Progress in Semiconductor Laser Diodes; (1987) https://doi.org/10.1117/12.937678
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

Fabrication and performance characteristics of both gain-guided and index-guided laser arrays emitting near 1.3μm are reported. The ten emitter laser arrays have threshold currents in the 300-500 mA range and have been operated to output powers of 600 mW near room temperature. The power output characteristics of these lasers are compared to that of a single emitter device where pulsed output powers of 200 mW have been obtained using a good current confining structure. The phase locked laser arrays exhibit rise and fall times of 1 ns under high current injection and can be modulated at 500 Mb/s.

Citation Download Citation

N. K. Dutta, T. M. Shen, S. G. Napholtz, and T. Cella "InGaAsP High Power Laser Array", Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); https://doi.org/10.1117/12.937678

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