Fresnel Phase Effects For X-Ray Microlithography

Renato Redaelli; Roman Tatchyn; Piero Pianetta

doi:10.1117/12.963694

30 June 1986 Fresnel Phase Effects For X-Ray Microlithography

Renato Redaelli, Roman Tatchyn, Piero Pianetta

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963694
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

A study of Fresnel diffraction effects is presented for structures of interest for X-Ray Microlithography. This analysis uses the full optical constants of the mask absorber pattern. Therefore, our calculations take into account the fact that the photons experience a phase shift as they go through the mask's absorbing layer in addition to simple absorption. Results are presented which show the consequences of adding the phase effects to the Fresnel analysis. These results show that phase effects cannot be disregarded in modeling Fresnel intensity profiles on resists.

Citation Download Citation

Renato Redaelli, Roman Tatchyn, and Piero Pianetta "Fresnel Phase Effects For X-Ray Microlithography", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963694

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