High Contrast Positive Resist(S) For Use In Megabit Processing With Broad Process Latitude

David A. Sawoska; Laurie J. Lauchlan; Laurel J. Smith; Edwin J. Turner; Allen C Spencer; Giora Ben-Shushan

doi:10.1117/12.963647

9 July 1986 High Contrast Positive Resist(S) For Use In Megabit Processing With Broad Process Latitude

David A. Sawoska, Laurie J. Lauchlan, Laurel J. Smith, Edwin J. Turner, Allen C Spencer, Giora Ben-Shushan

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963647
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

The general functional performance of the ULTRAMiC; PR-900 series has been described in the last two SPIE conferences (March 1984/1985). The present new systems, EPA-914/EPA-964 are further evolution(s) of the earlier PR-900 series with the following significant advances: 1. A "safe solvent" system (using no CA). 2. In the case of EPA-964, a novolak system has been synthesized to have: a) elevated softening point (approx. 190°C) yielding resist images with no reticulation problem(s), when etched in typical plasma etchers without deep UV/PRIST treatments. b) EPA-964 yields suitable image quality, which however is not equivalent to the high resolution/high speed EPA-914 system. 3. Dyed versions for superior alignment, inspection and linewidth measurements. In the case of 2a, both EPA-914/EPA-964 resist/image replication via plasma processing into a variety of substrates was studied experimentally, using typical plasma etching equipment under a variety of plasma conditions. The relative requirements for postbake/deep UV/PRIST treatments for both resists, and their mechanisms, as well as the effect of the plasma chemistry on the different novolak systems, are discussed in detail. To study both 2a and 2b, the Perkin-Elmer DRM along with the Micralign 600 Model 552HT were used to contrast the photolithographic response of both resists. Some of the lithographic properties monitored in both metal-ion containing and metalion free developers are:

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David A. Sawoska, Laurie J. Lauchlan, Laurel J. Smith, Edwin J. Turner, Allen C Spencer, and Giora Ben-Shushan "High Contrast Positive Resist(S) For Use In Megabit Processing With Broad Process Latitude", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963647

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KEYWORDS

Photoresist materials

Etching

Plasma

Plasma etching

Metals

Oxides

Deep ultraviolet

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