A-Si Photoreceptors At The Threshold Of Industrial Application

W. Senske; N. Marschall

doi:10.1117/12.961078

12 March 1986 A-Si Photoreceptors At The Threshold Of Industrial Application

W. Senske, N. Marschall

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961078
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

A-Si has become an attractive alternative for conventional electrophotographic photoreceptors. A-Si photoreceptors have been prepared by other laboratories by plasma deposition with blocking and protection layers. These photoreceptors are highly photosensitive and show low fatigue. Using sputtering we have shown that this technique is capable of produc-ing films with high charge acceptance. The increase of the deposition rate is presently un-der intensive investigation. High rates can be achieved by a higher degree of silane decomposition or by magnetron sputtering together with a higher power level. Deposition rates of more than 20 pm/h have been obtained by both techniques.

Citation Download Citation

W. Senske and N. Marschall "A-Si Photoreceptors At The Threshold Of Industrial Application", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961078

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