EBR-9 Development In Heated Environment

Samuel S.M. Fok; Patrick P. Tang; Keith Standiford

doi:10.1117/12.947850

18 April 1985 EBR-9 Development In Heated Environment

Samuel S.M. Fok, Patrick P. Tang, Keith Standiford

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947850
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

EBR-9, a positive E-beam resist, was developed in Japan as a possible replacement for PBS with wider processing latitude. The MIBK/IPA develope5 systems took 8-15 minutes in immersion development to yield sensitivities below 1 uC/cm² at 10 kV at temperatures of 25-30^oC. The newer developer, Developer V, can be used either with immersion or heated nitrogen-assisted spray development to give similar sensitivity but with higher contrast, at shorter development time. Solubility rate data are also presented. Our results show this to be another milestone toward a resist system with more process latitude than the standard PBS process.

Citation Download Citation

Samuel S.M. Fok, Patrick P. Tang, and Keith Standiford "EBR-9 Development In Heated Environment", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947850

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available