Paper
29 June 1984 Stepper Exposed Critical Dimension Tolerances Using The Vapor Jet Developer Nozzle
Donald F Ditmer, Matthew V Hanson
Author Affiliations +
Abstract
Resist image critical dimension control is a major concern in photolithographic processing. Many processing factors have first and second order effects making critical dimension control very difficult to maintain within reasonable tolerances. As the industry continually drives resist images to the sub micron geometries, it is no longer acceptable to have critical dimension variations across the wafer exceeding 10% of the nominal value if the process critical dimensions are to be maintained. Many of us are now facing the fact that process windows are collapsing to + 0.1 microns on critically defined levels. One of the first order factors in controlling and minimizing these critical dimension variations is the developing step. Currently, our production line at Inmos has two types of puddle developer tracks and a developer track with the vapor jet nozzle. Extensive evaluation and comparisons of these three systemsshow that superior control of both wafer to wafer and across wafer critical dimension uniformity is achieved with the system equipped with the vapor jet nozzle. Data shows that line width or space control of + .04 microns may be achieved across the wafer and wafer to wafer on flat (no topology) wafers with the vapor jet nozzle. Critical dimension control of + .06 microns is demonstrated on wafers with topology. These control limits are based on critical dimension measurements taken on material processed under standard production conditions.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donald F Ditmer and Matthew V Hanson "Stepper Exposed Critical Dimension Tolerances Using The Vapor Jet Developer Nozzle", Proc. SPIE 0470, Optical Microlithography III: Technology for the Next Decade, (29 June 1984); https://doi.org/10.1117/12.941917
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Metals

Critical dimension metrology

Optical lithography

Tolerancing

Photoresist processing

Standards development

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