160 Mpx/Sec Laser Pattern Generator For Mask And Reticle Production

D B. MacDonald; M Nagler; C Van Peski; T R Whitney

doi:10.1117/12.941919

29 June 1984 160 Mpx/Sec Laser Pattern Generator For Mask And Reticle Production

D B. MacDonald, M Nagler, C Van Peski, T R Whitney

Proceedings Volume 0470, Optical Microlithography III: Technology for the Next Decade; (1984) https://doi.org/10.1117/12.941919
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

A new Laser Pattern Generator (LPG) designed for reticle production was recently introduced by THE Semiconductor Equipment Corporation. The system uses HeCd laser radiation with a wavelength of 441.6 nm to expose commercial photoresist (e.g. AZ 1350J or AZ 1470). A writing rate of 160 Mpx/sec is achieved by parallel operation of sixteen (16) independently modulated channels. The binary light intensity distribution is controlled in each channel by acousto-optic modulation. The sixteen (16) independent chan-nels are brought to a common crossover and scanned simultaneously using a single acousto-optic deflector. Pattern data must be expanded into a pixel format in two steps due to the inherent writing speed of the LPG. Prior to run time, geometrical data is trans-lated from Electromask or Mann format into a compact vector format using an off-line preprocessing unit. The vector data is stored on a 300 Mbyte portable disk pack which has a nominal data transfer rate of 9.67 Mbits/sec. During run time, vector data is read from the disk and expanded in the real time processing unit to supply pixel data to the optical modulation system. The placement of data in the correct position is controlled by a laser interferometry system and a control computer. The LPG system throughput of 160 Mpx/ sec permits the writing of 100 mm x 100 mm rejicles with information equivalent to 10' optical pattern generator flashes in less than 30 minutes, independent of pat-tern complexity. Although the specified minimum geometry is 2.5 pm, patterns with 1 pm features have been resolved. The address resolution is 0.25 μm, and the individual beam spot size is 0.5 μm (FWHM). Examples of printed patterns are included.

Citation Download Citation

D B. MacDonald, M Nagler, C Van Peski, and T R Whitney "160 Mpx/Sec Laser Pattern Generator For Mask And Reticle Production", Proc. SPIE 0470, Optical Microlithography III: Technology for the Next Decade, (29 June 1984); https://doi.org/10.1117/12.941919

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