Negative Photoresists For Deep-UV Lithography

Jer-Ming Yang; Kaolin Chiong; Hoh-Jiear Yan; Ming-Fea Chow

doi:10.1117/12.941785

21 May 1984 Negative Photoresists For Deep-UV Lithography

Jer-Ming Yang, Kaolin Chiong, Hoh-Jiear Yan, Ming-Fea Chow

Proceedings Volume 0469, Advances in Resist Technology I; (1984) https://doi.org/10.1117/12.941785
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Several negative resists which are capable of submicron resolution and high sensitivity using projection printers for one-micron design groundrules have been formulated. In these resists, aryl azides act as photoactive components and aqueous-base developable polymers as resins. Photolysis of resist films generates reactive aryl nitrenes, and crosslinking of resins takes place. The dissolution rate of exposed resist in base developers is decreased with Ro/R near 11, and generally more than 12% of azide loading is found necessary to minimize film loss. By simple spectral filtration and by choosing proper azides, these resists print various profiles useful for many applications. Their lithographic performance as well as some improvements of these resists are summarized.

Citation Download Citation

Jer-Ming Yang, Kaolin Chiong, Hoh-Jiear Yan, and Ming-Fea Chow "Negative Photoresists For Deep-UV Lithography", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); https://doi.org/10.1117/12.941785

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