Germanium-Selenium (Ge-Se) Based Resist Systems For Submicron VLSI Application

E. Ong; K. L. Tai; R. G. Vadimsky; c. T. Kemmerer

doi:10.1117/12.935120

7 November 1983 Germanium-Selenium (Ge-Se) Based Resist Systems For Submicron VLSI Application

E. Ong, K. L. Tai, R. G. Vadimsky, c. T. Kemmerer

Proceedings Volume 0394, Optical Microlithography II: Technology for the 1980s; (1983) https://doi.org/10.1117/12.935120
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

A review of key developments in the field of inorganic resist systems is presented. We also discuss the role that inorganic resist systems can play in submicron optical lithography for VLSI. Because of a unique set of material characteristics, the optical lithographic performance of these resist systems surpasses that of any known organic resist system, and even exceeds that expected for a resist having infinite contrast. Effects such as edge sharpening and photobleaching compensate for the resolution-limiting diffraction effects in optical lithography. We discuss a two-stage imaging mechanism, consisting of the definition of a thin image layer followed by anisotropic, wet chemical etching to replicate this high resolution image into the entire thickness of the Ge-Se film. The high absorbance of these films to the exposing radiation eliminates problems associated with substrate reflectivity and their resistance to oxygen plasma allows the use of a bi-level scheme that alleviates problems associated with device topography. Sensitivity of this resist system to the entire UV spectrum permits the use of a single resist system for all current and future optical exposure tools.

Citation Download Citation

E. Ong, K. L. Tai, R. G. Vadimsky, and c. T. Kemmerer "Germanium-Selenium (Ge-Se) Based Resist Systems For Submicron VLSI Application", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); https://doi.org/10.1117/12.935120

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