Reflecting On Metalorganic Chemical Vapor Deposition (MOCVD)

H. M. Manasevit

doi:10.1117/12.934281

15 September 1982 Reflecting On Metalorganic Chemical Vapor Deposition (MOCVD)

H. M. Manasevit

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934281
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Fourteen years have elapsed since our laboratory first reported the successful use of metalorganic-hydride combinations for producing epitaxial compound semiconductor films and alloys on insulating substrates and semiconductors. The technique has since been applied to the formation of a variety of III-V, II-VI, and IV-VI semiconductor compounds and alloys. More recently II-IV-V2 compounds were also produced. Successes in our laboratory and others and the application of the technique to devices continue to point to the process as the most viable one available today to produce large area growth of many types of films. Since much of the early work was performed in our laboratory, it may be of interest to this audience to become familiar with the steps that had to be climbed and the problems that were met in attaining the degree of quality now available in films grown by metal organic chemical vapor deposition (MO-CVD).

Citation Download Citation

H. M. Manasevit "Reflecting On Metalorganic Chemical Vapor Deposition (MOCVD)", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934281

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