Growth Of InP By Metalorganic Chemical Vapor Deposition (MOCVD)

R. D. Dupuis; R. T. Lynch; C. D. Thurmond; W. A. Bonner

doi:10.1117/12.934287

15 September 1982 Growth Of InP By Metalorganic Chemical Vapor Deposition (MOCVD)

R. D. Dupuis, R. T. Lynch, C. D. Thurmond, W. A. Bonner

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934287
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

The electrical properties of unintentionally-doped InP epitaxial layers grown on (100) InP:Fe substrates by Metalorganic Chemical Vapor Deposition (MOCVD) have been studied as a function of the source materials and the deposition conditions. The low-temperature (77K) photoluminescence of these films was also studied and used to identify zinc as the major residual acceptor in these films.

Citation Download Citation

R. D. Dupuis, R. T. Lynch, C. D. Thurmond, and W. A. Bonner "Growth Of InP By Metalorganic Chemical Vapor Deposition (MOCVD)", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934287

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available