Al[sub]x[/sub]Ga[sub]1-x[/sub]As/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy

H. Morkoc; N. Holonyak Jr.; T. J. Drummond; M. D. Camras; R. Fischer

doi:10.1117/12.934270

15 September 1982 Al_xGa_1-xAs/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy

H. Morkoc, N. Holonyak Jr., T. J. Drummond, M. D. Camras, R. Fischer

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934270
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

AlxGa1-xAs/GaAs multiple quantum well (MQW) heterojunction structures have been grown by molecular beam epitaxy. Photopumped structures having quantum well sizes as low as 28 Å have shown 300 K and cw performance. MQW's with 28 Å well sizes grown at a substrate temperature of 720°C resulted in an equivalent current density of 2.3 kA/cm2 at a wavelength of about 7,270 Å.

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H. Morkoc, N. Holonyak Jr., T. J. Drummond, M. D. Camras, and R. Fischer "Al_xGa_1-xAs/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934270

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