Puddle Development Of Positive Photoresists

R. F. Leonard; J. A. McFarland

doi:10.1117/12.931891

28 July 1981 Puddle Development Of Positive Photoresists

R. F. Leonard, J. A. McFarland

Proceedings Volume 0275, Semiconductor Microlithography VI; (1981) https://doi.org/10.1117/12.931891
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

The production of today's 2-3 micron line widths with the expectation of continuing yield improvement can only be accomplished by the use of automated wafer processing equipment. Data is presented on a new positive system that combines the high resolution advantages of positive photoresists with automated in-line puddle development. In the puddle development process the imaged wafer is developed on an automated wafer processing track, with WX 108 developer. Process constraints of film thickness loss and time of development were established to allow investigation of the following variables; softbake conditions, exposure energy, and developer temperature. It was found that a 50% variation in developer dwell time caused less than a 4% developed image deviation from the mask.

Citation Download Citation

R. F. Leonard and J. A. McFarland "Puddle Development Of Positive Photoresists", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); https://doi.org/10.1117/12.931891

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