Comparison Of Electron Beam And Optical Projection Lithography In The Region Of One Micrometer

T. S. Chang; D. F. Kyser; C. H. Ting

doi:10.1117/12.931881

28 July 1981 Comparison Of Electron Beam And Optical Projection Lithography In The Region Of One Micrometer

T. S. Chang, D. F. Kyser, C. H. Ting

Proceedings Volume 0275, Semiconductor Microlithography VI; (1981) https://doi.org/10.1117/12.931881
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

The purpose of this paper is to discuss the practical trade-offs of electron beam direct-write and optical projection techniques in terms of resolution and linewidth control for device geometries in the one micrometer feature region. Overlay, field size, throughput and other economic issues will not be addressed. It is generally understood that the overlay accuracy of E-beam direct-write is the bestl among the various lithographic approaches.

Citation Download Citation

T. S. Chang, D. F. Kyser, and C. H. Ting "Comparison Of Electron Beam And Optical Projection Lithography In The Region Of One Micrometer", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); https://doi.org/10.1117/12.931881

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